Main Contents begins from here.
NEDO Forum for energy saving is held at NEDO booth of “INCHEM TOKYO 2015” at East Hall 1 1B-01 in Tokyo Big Sight on 25-27th November 2015
On this forum, We will have speech for accomplishment report of GaN bidirectional switch to get high efficiency inverter in FY2008-2010. GaN transistor (X-GaN™) which is related product of this project is shown (demonstrated) at Panasonic booth at NEDO.
GaN transistor (X-GaN™) use part of research result GaN bidirectional switch to get high efficiency inverter which is NEDO Joint research projects
About NEDO(New Energy and Industrial Technology Development Organization)
NEDO plays an important part in Japan's economic and industrial policies as one of the largest public research and development management organizations. It has two basic missions: addressing energy and global environmental problems, and enhancing industrial technology.
High efficiency of the power conversion circuit ,which use inverter or converter, is quit important for energy saving, but efficiency is limited by silicon devices, GaN has better material properties than silicon and more efficiency is expected.
The Inverter circuit has IGET and diode for return current are used, both devices have voltage offset(VF ) and the power loss is big, but the inverter which uses X-GaN™ which does not have voltage offset may have low power loss, and GaN can be through the return current and diode does not used, It means number of devices are reduced and small inverter can be made.
The circuit and driving method of GaN are build by NEDO project and used in X-GaN™. The project result and Panasonic approach are shown in NEDO Forum for energy saving.
We are looking forward to seeing you.
|Place:||NEDO booth (East Hall 1 1B-01)|
|Day and Time:||From 1315 26th November 2015|
|Theme:||Program for Strategic Innovative Energy Saving Technology|
|Subject:||Research and Development of GaN Bidirectional Switch for Highly Efficient Inverter|